Hauptseite > Publikationsdatenbank > Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs > print

001     821187
005     20210129224821.0
020 _ _ |a 978-1-4673-8609-8
024 7 _ |a 10.1109/ULIS.2016.7440082
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037 _ _ |a FZJ-2016-06425
041 _ _ |a English
100 1 _ |a Narimani, Keyvan
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|e Corresponding author
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111 2 _ |a 2016 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
|c Vienna
|d 1/25/2016 - 1/27/2016
|w Austria
245 _ _ |a Current mirrors with strained Si single nanowire gate all around Schottky barrier MOSFETs
260 _ _ |a [Piscataway, NJ]
|c 2016
|b IEEE
300 _ _ |a 178-181
336 7 _ |a CONFERENCE_PAPER
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336 7 _ |a Conference Paper
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336 7 _ |a Contribution to a book
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520 _ _ |a In this work, we present a simple current mirror based on two single nanowire strained silicon Schottky barrier (SB) MOSFETs with gate-all-around (GAA) structure. B+ implantation into NiSi2 with dopant segregation at source and drain was used to decrease the Schottky barrier height for holes at the metal/channel junctions. The current mirror shows a very good Mirror Ratio MR = 0.99 and high output resistance of 100MΩ.
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700 1 _ |a Luong, G. V.
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700 1 _ |a Schulte-Braucks, C.
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700 1 _ |a Trellenkamp, S.
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700 1 _ |a Zhao, Q. T.
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700 1 _ |a Mantl, S.
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700 1 _ |a Chowdhury, M. F.
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773 _ _ |a 10.1109/ULIS.2016.7440082
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