%0 Journal Article
%A Tsuruoka, Tohru
%A Valov, Ilia
%A Mannequin, Cedric
%A Hasegawa, Tsuyoshi
%A Waser, R.
%A Aono, Masakazu
%T Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure
%J Japanese journal of applied physics
%V 55
%N 6S1
%@ 1347-4065
%C Bristol
%I IOP Publ.
%M FZJ-2016-07036
%P 06GJ09 -
%D 2016
%X Redox reactions at the Cu/Ta$_{2}$ O$_{5}$ interface and subsequent Cu ion transport in a Ta2O5 film have been investigated by means of cyclic voltammetry (CV) measurements. Under positive bias to the Cu electrode, Cu is preferentially oxidized to Cu2+ and then to Cu+. Subsequent negative bias causes a reduction of the oxidized Cu ions at the interface. It was found that CV curves change drastically with varied relative humidity levels from 5 to 85%. At higher humidity levels, the ion concentrations and diffusion coefficients, estimated from the CV curves, suggest increased redox reaction rates and a significant contribution of proton conduction to the ionic transport. The results indicate that the redox reactions of moisture are rate-limiting and highlight the importance of water uptake by the matrix oxide film in understanding and controlling the resistive switching behavior of oxide-based atomic switches.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000377484100050
%R 10.7567/JJAP.55.06GJ09
%U https://juser.fz-juelich.de/record/824447