Journal Article

FZJ-2016-07036

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure

Tsuruoka, T. (Corresponding author) ; Valov, I.FZJ* ; Mannequin, C. ; Hasegawa, T. ; Waser, R.FZJ* ; Aono, M.

2016
IOP Publ. Bristol

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Please use a persistent id in citations: doi:10.7567/JJAP.55.06GJ09

Abstract: Redox reactions at the Cu/Ta$_{2}$ O$_{5}$ interface and subsequent Cu ion transport in a Ta2O5 film have been investigated by means of cyclic voltammetry (CV) measurements. Under positive bias to the Cu electrode, Cu is preferentially oxidized to Cu2+ and then to Cu+. Subsequent negative bias causes a reduction of the oxidized Cu ions at the interface. It was found that CV curves change drastically with varied relative humidity levels from 5 to 85%. At higher humidity levels, the ion concentrations and diffusion coefficients, estimated from the CV curves, suggest increased redox reaction rates and a significant contribution of proton conduction to the ionic transport. The results indicate that the redox reactions of moisture are rate-limiting and highlight the importance of water uptake by the matrix oxide film in understanding and controlling the resistive switching behavior of oxide-based atomic switches.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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