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000824447 1001_ $$0P:(DE-HGF)0$$aTsuruoka, Tohru$$b0$$eCorresponding author
000824447 245__ $$aHumidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure
000824447 260__ $$aBristol$$bIOP Publ.$$c2016
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000824447 520__ $$aRedox reactions at the Cu/Ta$_{2}$ O$_{5}$ interface and subsequent Cu ion transport in a Ta2O5 film have been investigated by means of cyclic voltammetry (CV) measurements. Under positive bias to the Cu electrode, Cu is preferentially oxidized to Cu2+ and then to Cu+. Subsequent negative bias causes a reduction of the oxidized Cu ions at the interface. It was found that CV curves change drastically with varied relative humidity levels from 5 to 85%. At higher humidity levels, the ion concentrations and diffusion coefficients, estimated from the CV curves, suggest increased redox reaction rates and a significant contribution of proton conduction to the ionic transport. The results indicate that the redox reactions of moisture are rate-limiting and highlight the importance of water uptake by the matrix oxide film in understanding and controlling the resistive switching behavior of oxide-based atomic switches.
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000824447 7001_ $$0P:(DE-HGF)0$$aHasegawa, Tsuyoshi$$b3
000824447 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$ufzj
000824447 7001_ $$0P:(DE-HGF)0$$aAono, Masakazu$$b5
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