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| Hauptseite > Publikationsdatenbank > Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure > print |
| Hauptseite > Publikationsdatenbank > Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure > print |
| 001 | 824447 | ||
| 005 | 20210129225038.0 | ||
| 024 | 7 | _ | |a 10.7567/JJAP.55.06GJ09 |2 doi |
| 024 | 7 | _ | |a 0021-4922 |2 ISSN |
| 024 | 7 | _ | |a 1347-4065 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2016-07036 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Tsuruoka, Tohru |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Humidity effects on the redox reactions and ionic transport in a Cu/Ta$_{2}$ O$_{5}$ /Pt atomic switch structure |
| 260 | _ | _ | |a Bristol |c 2016 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a Redox reactions at the Cu/Ta$_{2}$ O$_{5}$ interface and subsequent Cu ion transport in a Ta2O5 film have been investigated by means of cyclic voltammetry (CV) measurements. Under positive bias to the Cu electrode, Cu is preferentially oxidized to Cu2+ and then to Cu+. Subsequent negative bias causes a reduction of the oxidized Cu ions at the interface. It was found that CV curves change drastically with varied relative humidity levels from 5 to 85%. At higher humidity levels, the ion concentrations and diffusion coefficients, estimated from the CV curves, suggest increased redox reaction rates and a significant contribution of proton conduction to the ionic transport. The results indicate that the redox reactions of moisture are rate-limiting and highlight the importance of water uptake by the matrix oxide film in understanding and controlling the resistive switching behavior of oxide-based atomic switches. |
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| 773 | _ | _ | |a 10.7567/JJAP.55.06GJ09 |g Vol. 55, no. 6S1, p. 06GJ09 - |0 PERI:(DE-600)2006801-3 |n 6S1 |p 06GJ09 - |t Japanese journal of applied physics |v 55 |y 2016 |x 1347-4065 |
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