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000824448 1001_ $$0P:(DE-Juel1)159348$$aKim, W.$$b0$$ufzj
000824448 245__ $$a3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices
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000824448 520__ $$aThe influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOx-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher ROFF/RON(>103) with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOx/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125°C for 104 s. Furthermore, the TaOx ReRAM device with both the electrodes shows high endurance up to 106 cycles based on two states.
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000824448 7001_ $$0P:(DE-Juel1)158062$$aMenzel, S.$$b1$$ufzj
000824448 7001_ $$0P:(DE-HGF)0$$aWouters, D. J.$$b2
000824448 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b3$$ufzj
000824448 7001_ $$0P:(DE-Juel1)145504$$aRana, V.$$b4$$ufzj
000824448 773__ $$0PERI:(DE-600)2034325-5$$a10.1109/LED.2016.2542879$$gVol. 37, no. 5, p. 564 - 567$$n5$$p564 - 567$$tIEEE electron device letters$$v37$$x1558-0563$$y2016
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