Journal Article

FZJ-2016-07037

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices

Kim, W.FZJ* ; Menzel, S.FZJ* ; Wouters, D. J. ; Waser, R.FZJ* ; Rana, V.FZJ*

2016
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/LED.2016.2542879

Abstract: The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOx-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher ROFF/RON(>103) with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOx/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125°C for 104 s. Furthermore, the TaOx ReRAM device with both the electrodes shows high endurance up to 106 cycles based on two states.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
Current Contents - Engineering, Computing and Technology ; IF < 5 ; JCR ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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