% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kim:824448,
      author       = {Kim, W. and Menzel, S. and Wouters, D. J. and Waser, R. and
                      Rana, V.},
      title        = {3-{B}it {M}ultilevel {S}witching by {D}eep {R}eset
                      {P}henomenon in {P}t/{W}/{T}a{O}$_{{X}}$ /{P}t-{R}e{RAM}
                      {D}evices},
      journal      = {IEEE electron device letters},
      volume       = {37},
      number       = {5},
      issn         = {1558-0563},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-07037},
      pages        = {564 - 567},
      year         = {2016},
      abstract     = {The influence of two different ohmic electrodes (W and Ta)
                      on the resistive switching characteristics of TaOx-based
                      resistive random access memory (ReRAM) devices has been
                      studied. Consistently, higher resistance OFF states have
                      been observed with the W-ohmic electrode under the same
                      operational conditions for all reset stop voltages
                      (Vreset-stop) during both the dc and ac measurements. The
                      deeper reset for samples with W-electrode is attributed to
                      the less negative Gibbs-free energy of W-oxide compared with
                      Ta-oxide, resulting in easier re-oxidation of the filament
                      through oxygen exchange with the W-electrode. The higher
                      ROFF/RON(>103) with the W-electrode enables 3-bit multilevel
                      cell operation in the Pt/W/TaOx/Pt ReRAM device. An
                      excellent retention for these eight states is demonstrated
                      at 125°C for 104 s. Furthermore, the TaOx ReRAM device with
                      both the electrodes shows high endurance up to 106 cycles
                      based on two states.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000374868300010},
      doi          = {10.1109/LED.2016.2542879},
      url          = {https://juser.fz-juelich.de/record/824448},
}