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| Home > Publications database > 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices > print |
| 001 | 824448 | ||
| 005 | 20210129225038.0 | ||
| 024 | 7 | _ | |a 10.1109/LED.2016.2542879 |2 doi |
| 024 | 7 | _ | |a 0741-3106 |2 ISSN |
| 024 | 7 | _ | |a 1558-0563 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2016-07037 |
| 082 | _ | _ | |a 620 |
| 100 | 1 | _ | |a Kim, W. |0 P:(DE-Juel1)159348 |b 0 |u fzj |
| 245 | _ | _ | |a 3-Bit Multilevel Switching by Deep Reset Phenomenon in Pt/W/TaO$_{X}$ /Pt-ReRAM Devices |
| 260 | _ | _ | |a New York, NY |c 2016 |b IEEE |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a The influence of two different ohmic electrodes (W and Ta) on the resistive switching characteristics of TaOx-based resistive random access memory (ReRAM) devices has been studied. Consistently, higher resistance OFF states have been observed with the W-ohmic electrode under the same operational conditions for all reset stop voltages (Vreset-stop) during both the dc and ac measurements. The deeper reset for samples with W-electrode is attributed to the less negative Gibbs-free energy of W-oxide compared with Ta-oxide, resulting in easier re-oxidation of the filament through oxygen exchange with the W-electrode. The higher ROFF/RON(>103) with the W-electrode enables 3-bit multilevel cell operation in the Pt/W/TaOx/Pt ReRAM device. An excellent retention for these eight states is demonstrated at 125°C for 104 s. Furthermore, the TaOx ReRAM device with both the electrodes shows high endurance up to 106 cycles based on two states. |
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| 700 | 1 | _ | |a Rana, V. |0 P:(DE-Juel1)145504 |b 4 |u fzj |
| 773 | _ | _ | |a 10.1109/LED.2016.2542879 |g Vol. 37, no. 5, p. 564 - 567 |0 PERI:(DE-600)2034325-5 |n 5 |p 564 - 567 |t IEEE electron device letters |v 37 |y 2016 |x 1558-0563 |
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