000824449 001__ 824449
000824449 005__ 20210129225039.0
000824449 0247_ $$2doi$$a10.1016/j.mee.2016.01.025
000824449 0247_ $$2ISSN$$a0167-9317
000824449 0247_ $$2ISSN$$a1873-5568
000824449 0247_ $$2WOS$$aWOS:000378363400007
000824449 037__ $$aFZJ-2016-07038
000824449 082__ $$a620
000824449 1001_ $$0P:(DE-Juel1)159348$$aKim, Wonjoo$$b0$$eCorresponding author
000824449 245__ $$aNonlinearity analysis of TaOX redox-based RRAM
000824449 260__ $$a[S.l.]$$bElsevier$$c2016
000824449 3367_ $$2DRIVER$$aarticle
000824449 3367_ $$2DataCite$$aOutput Types/Journal article
000824449 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1557382055_24088
000824449 3367_ $$2BibTeX$$aARTICLE
000824449 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000824449 3367_ $$00$$2EndNote$$aJournal Article
000824449 520__ $$aFor the passive crossbar integration of redox-based resistive RAM (ReRAM), understanding the nonlinearity (NL) of the I–V characteristics and its impact on the device parameters are highly required. Here, we report the NL of TiN/TaOx/Ta/Pt ReRAM for different switching oxide thicknesses (7.0 nm vs. 3.5 nm) and various device sizes (85 nm × 85 nm to 135 nm × 135 nm) as function of SET current compliance levels as well as the SET current compliance impact on the resistance ratio (off to on). The NL in pulsed AC mode improves with lower current compliance levels regardless of device area. At extremely low compliance level, the device shows the highest NL of 12 in the AC mode. The resistance ratio and the NL parameter in the ReRAM device are observed to be the competing factors as the resistance ratio degrades with improvement of the NL at the lower current compliance level. However, the NL parameter is independent of the switching layer thickness.
000824449 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000824449 588__ $$aDataset connected to CrossRef
000824449 7001_ $$0P:(DE-Juel1)144776$$aRösgen, Bernd$$b1
000824449 7001_ $$0P:(DE-Juel1)157669$$aBreuer, Thomas$$b2
000824449 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b3
000824449 7001_ $$0P:(DE-HGF)0$$aWouters, Dirk$$b4
000824449 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b5$$ufzj
000824449 7001_ $$0P:(DE-Juel1)145504$$aRana, Vikas$$b6
000824449 773__ $$0PERI:(DE-600)1497065-x$$a10.1016/j.mee.2016.01.025$$gVol. 154, p. 38 - 41$$p38 - 41$$tMicroelectronic engineering$$v154$$x0167-9317$$y2016
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.pdf$$yRestricted
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.gif?subformat=icon$$xicon$$yRestricted
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.jpg?subformat=icon-180$$xicon-180$$yRestricted
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.jpg?subformat=icon-640$$xicon-640$$yRestricted
000824449 8564_ $$uhttps://juser.fz-juelich.de/record/824449/files/1-s2.0-S0167931716300259-main.pdf?subformat=pdfa$$xpdfa$$yRestricted
000824449 909CO $$ooai:juser.fz-juelich.de:824449$$pVDB
000824449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159348$$aForschungszentrum Jülich$$b0$$kFZJ
000824449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157669$$aForschungszentrum Jülich$$b2$$kFZJ
000824449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)158062$$aForschungszentrum Jülich$$b3$$kFZJ
000824449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b5$$kFZJ
000824449 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)145504$$aForschungszentrum Jülich$$b6$$kFZJ
000824449 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000824449 9141_ $$y2016
000824449 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000824449 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000824449 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000824449 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000824449 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bMICROELECTRON ENG : 2015
000824449 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000824449 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000824449 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000824449 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000824449 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000824449 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000824449 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000824449 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000824449 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000824449 9201_ $$0I:(DE-Juel1)PGI-10-20170113$$kPGI-10$$lJARA Institut Green IT$$x1
000824449 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x2
000824449 980__ $$ajournal
000824449 980__ $$aVDB
000824449 980__ $$aI:(DE-Juel1)PGI-7-20110106
000824449 980__ $$aI:(DE-Juel1)PGI-10-20170113
000824449 980__ $$aI:(DE-82)080009_20140620
000824449 980__ $$aUNRESTRICTED