Journal Article

FZJ-2016-07038

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Nonlinearity analysis of TaOX redox-based RRAM

Kim, W. (Corresponding author)FZJ* ; Rösgen, B. ; Breuer, T.FZJ* ; Menzel, S.FZJ* ; Wouters, D. ; Waser, R.FZJ* ; Rana, V.FZJ*

2016
Elsevier [S.l.]

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Please use a persistent id in citations: doi:10.1016/j.mee.2016.01.025

Abstract: For the passive crossbar integration of redox-based resistive RAM (ReRAM), understanding the nonlinearity (NL) of the I–V characteristics and its impact on the device parameters are highly required. Here, we report the NL of TiN/TaOx/Ta/Pt ReRAM for different switching oxide thicknesses (7.0 nm vs. 3.5 nm) and various device sizes (85 nm × 85 nm to 135 nm × 135 nm) as function of SET current compliance levels as well as the SET current compliance impact on the resistance ratio (off to on). The NL in pulsed AC mode improves with lower current compliance levels regardless of device area. At extremely low compliance level, the device shows the highest NL of 12 in the AC mode. The resistance ratio and the NL parameter in the ReRAM device are observed to be the competing factors as the resistance ratio degrades with improvement of the NL at the lower current compliance level. However, the NL parameter is independent of the switching layer thickness.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)
2. JARA Institut Green IT (PGI-10)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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