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@ARTICLE{Kim:824449,
      author       = {Kim, Wonjoo and Rösgen, Bernd and Breuer, Thomas and
                      Menzel, Stephan and Wouters, Dirk and Waser, R. and Rana,
                      Vikas},
      title        = {{N}onlinearity analysis of {T}a{OX} redox-based {RRAM}},
      journal      = {Microelectronic engineering},
      volume       = {154},
      issn         = {0167-9317},
      address      = {[S.l.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2016-07038},
      pages        = {38 - 41},
      year         = {2016},
      abstract     = {For the passive crossbar integration of redox-based
                      resistive RAM (ReRAM), understanding the nonlinearity (NL)
                      of the I–V characteristics and its impact on the device
                      parameters are highly required. Here, we report the NL of
                      TiN/TaOx/Ta/Pt ReRAM for different switching oxide
                      thicknesses (7.0 nm vs. 3.5 nm) and various device sizes (85
                      nm × 85 nm to 135 nm × 135 nm) as function of SET current
                      compliance levels as well as the SET current compliance
                      impact on the resistance ratio (off to on). The NL in pulsed
                      AC mode improves with lower current compliance levels
                      regardless of device area. At extremely low compliance
                      level, the device shows the highest NL of 12 in the AC mode.
                      The resistance ratio and the NL parameter in the ReRAM
                      device are observed to be the competing factors as the
                      resistance ratio degrades with improvement of the NL at the
                      lower current compliance level. However, the NL parameter is
                      independent of the switching layer thickness.},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000378363400007},
      doi          = {10.1016/j.mee.2016.01.025},
      url          = {https://juser.fz-juelich.de/record/824449},
}