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| Hauptseite > Publikationsdatenbank > Nonlinearity analysis of TaOX redox-based RRAM > print |
| 001 | 824449 | ||
| 005 | 20210129225039.0 | ||
| 024 | 7 | _ | |a 10.1016/j.mee.2016.01.025 |2 doi |
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| 100 | 1 | _ | |a Kim, Wonjoo |0 P:(DE-Juel1)159348 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Nonlinearity analysis of TaOX redox-based RRAM |
| 260 | _ | _ | |a [S.l.] |c 2016 |b Elsevier |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a For the passive crossbar integration of redox-based resistive RAM (ReRAM), understanding the nonlinearity (NL) of the I–V characteristics and its impact on the device parameters are highly required. Here, we report the NL of TiN/TaOx/Ta/Pt ReRAM for different switching oxide thicknesses (7.0 nm vs. 3.5 nm) and various device sizes (85 nm × 85 nm to 135 nm × 135 nm) as function of SET current compliance levels as well as the SET current compliance impact on the resistance ratio (off to on). The NL in pulsed AC mode improves with lower current compliance levels regardless of device area. At extremely low compliance level, the device shows the highest NL of 12 in the AC mode. The resistance ratio and the NL parameter in the ReRAM device are observed to be the competing factors as the resistance ratio degrades with improvement of the NL at the lower current compliance level. However, the NL parameter is independent of the switching layer thickness. |
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| 700 | 1 | _ | |a Rösgen, Bernd |0 P:(DE-Juel1)144776 |b 1 |
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| 773 | _ | _ | |a 10.1016/j.mee.2016.01.025 |g Vol. 154, p. 38 - 41 |0 PERI:(DE-600)1497065-x |p 38 - 41 |t Microelectronic engineering |v 154 |y 2016 |x 0167-9317 |
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