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@ARTICLE{Lee:824450,
      author       = {Lee, Woongkyu and Yoo, Sijung and Yoon, Kyung Jean and Yeu,
                      In Won and Chang, Hye Jung and Choi, Jung-Hae and
                      Hoffmann-Eifert, Susanne and Waser, R. and Hwang, Cheol
                      Seong},
      title        = {{R}esistance switching behavior of atomic layer deposited
                      {S}r{T}i{O}$_{3}$ film through possible formation of
                      {S}r$_{2}${T}i$_{6}${O}$_{13}$ or
                      {S}r$_{1}${T}i$_{11}${O}$_{20}$ phases},
      journal      = {Scientific reports},
      volume       = {6},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2016-07039},
      pages        = {20550 -},
      year         = {2016},
      abstract     = {Identification of microstructural evolution of nanoscale
                      conducting phase, such as conducting filament (CF), in many
                      resistance switching (RS) devices is a crucial factor to
                      unambiguously understand the electrical behaviours of the
                      RS-based electronic devices. Among the diverse RS material
                      systems, oxide-based redox system comprises the major
                      category of these intriguing electronic devices, where the
                      local, along both lateral and vertical directions of thin
                      films, changes in oxygen chemistry has been suggested to be
                      the main RS mechanism. However, there are systems which
                      involve distinctive crystallographic phases as CF; the
                      Magnéli phase in TiO2 is one of the very well-known
                      examples. The current research reports the possible presence
                      of distinctive local conducting phase in atomic layer
                      deposited SrTiO3 RS thin film. The conducting phase was
                      identified through extensive transmission electron
                      microscopy studies, which indicated that oxygen-deficient
                      Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly
                      along the grain boundaries of SrTiO3 after the unipolar set
                      switching in Pt/TiN/SrTiO3/Pt structure. A detailed
                      electrical characterization revealed that the samples showed
                      typical bipolar and complementary RS after the memory cell
                      was unipolar reset.},
      cin          = {PGI-7},
      ddc          = {000},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000369146300001},
      doi          = {10.1038/srep20550},
      url          = {https://juser.fz-juelich.de/record/824450},
}