TY  - JOUR
AU  - Eisele, H.
AU  - Schuppang, J.
AU  - Schnedler, M.
AU  - Duchamp, M.
AU  - Nenstiel, C.
AU  - Portz, V.
AU  - Kure, T.
AU  - Bügler, M.
AU  - Lenz, A.
AU  - Dähne, M.
AU  - Hoffmann, A.
AU  - Gwo, S.
AU  - Choi, S.
AU  - Speck, J. S.
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Ph.
TI  - Intrinsic electronic properties of high-quality wurtzite InN
JO  - Physical review / B
VL  - 94
IS  - 24
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2016-07900
SP  - 245201
PY  - 2016
AB  - Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (101¯0) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000390258800004
DO  - DOI:10.1103/PhysRevB.94.245201
UR  - https://juser.fz-juelich.de/record/825437
ER  -