Journal Article

FZJ-2016-07900

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Intrinsic electronic properties of high-quality wurtzite InN

Eisele, H. (Corresponding author) ; Schuppang, J. ; Schnedler, M.FZJ* ; Duchamp, M. ; Nenstiel, C. ; Portz, V.FZJ* ; Kure, T. ; Bügler, M. ; Lenz, A. ; Dähne, M. ; Hoffmann, A.FZJ* ; Gwo, S. ; Choi, S.FZJ* ; Speck, J. S. ; Dunin-Borkowski, R.FZJ* ; Ebert, P.FZJ*

2016
Inst. Woodbury, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/13350  doi:10.1103/PhysRevB.94.245201

Abstract: Recent reports suggested that InN is a highly unusual III-V semiconductor, whose behavior fundamentally differs from that of others. We therefore analyzed its intrinsic electronic properties on the highest available quality InN layers, demonstrating the absence of electron accumulation at the (101¯0) cleavage surface and in the bulk. The bulk electron density is governed solely by dopants. Hence, we conclude that InN acts similarly to the other III-V semiconductors and previously reported intriguing effects are related to low crystallinity, surface decomposition, nonstoichiometry, and/or In adlayers.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)
2. HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) (HITEC-20170406)

Appears in the scientific report 2016

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Database coverage:
; ; ; Current Contents - Physical, Chemical and Earth Sciences ; Ebsco Academic Search ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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