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@ARTICLE{Eisele:825437,
author = {Eisele, H. and Schuppang, J. and Schnedler, M. and Duchamp,
M. and Nenstiel, C. and Portz, V. and Kure, T. and Bügler,
M. and Lenz, A. and Dähne, M. and Hoffmann, A. and Gwo, S.
and Choi, S. and Speck, J. S. and Dunin-Borkowski, Rafal and
Ebert, Ph.},
title = {{I}ntrinsic electronic properties of high-quality wurtzite
{I}n{N}},
journal = {Physical review / B},
volume = {94},
number = {24},
issn = {2469-9950},
address = {Woodbury, NY},
publisher = {Inst.},
reportid = {FZJ-2016-07900},
pages = {245201},
year = {2016},
abstract = {Recent reports suggested that InN is a highly unusual III-V
semiconductor, whose behavior fundamentally differs from
that of others. We therefore analyzed its intrinsic
electronic properties on the highest available quality InN
layers, demonstrating the absence of electron accumulation
at the (101¯0) cleavage surface and in the bulk. The bulk
electron density is governed solely by dopants. Hence, we
conclude that InN acts similarly to the other III-V
semiconductors and previously reported intriguing effects
are related to low crystallinity, surface decomposition,
nonstoichiometry, and/or In adlayers.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {143 - Controlling Configuration-Based Phenomena (POF3-143)
/ HITEC - Helmholtz Interdisciplinary Doctoral Training in
Energy and Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-143 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000390258800004},
doi = {10.1103/PhysRevB.94.245201},
url = {https://juser.fz-juelich.de/record/825437},
}