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@ARTICLE{Seif:825452,
      author       = {Seif, Johannes P. and Descoeudres, Antoine and Nogay, Gizem
                      and Hanni, Simon and de Nicolas, Silvia Martin and Holm,
                      Niels and Geissbuhler, Jonas and Hessler-Wyser, Aicha and
                      Duchamp, Martial and Dunin-Borkowski, Rafal and Ledinsky,
                      Martin and De Wolf, Stefaan and Ballif, Christophe},
      title        = {{S}trategies for {D}oped {N}anocrystalline {S}ilicon
                      {I}ntegration in {S}ilicon {H}eterojunction {S}olar {C}ells},
      journal      = {IEEE journal of photovoltaics},
      volume       = {6},
      number       = {5},
      issn         = {2156-3381},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2016-07915},
      pages        = {1132 - 1140},
      year         = {2016},
      abstract     = {Carrier collection in silicon heterojunction (SHJ) solar
                      cells is usually achieved by doped amorphous silicon layers
                      of a few nanometers, deposited at opposite sides of the
                      crystalline silicon wafer. These layers are often
                      defect-rich, resulting in modest doping efficiencies,
                      parasitic optical absorption when applied at the front of
                      solar cells, and high contact resistivities with the
                      adjacent transparent electrodes. Their substitution by
                      equally thin doped nanocrystalline silicon layers has often
                      been argued to resolve these drawbacks. However,
                      low-temperature deposition of highly crystalline doped
                      layers of such thickness on amorphous surfaces demands
                      sophisticated deposition engineering. In this paper, we
                      review and discuss different strategies to facilitate the
                      nucleation of nanocrystalline silicon layers and assess
                      their compatibility with SHJ solar cell fabrication. We also
                      implement the obtained layers into devices, yielding solar
                      cells with fill factor values of over $79\%$ and
                      efficiencies of over $21.1\%,$ clearly underlining the
                      promise this material holds for SHJ solar cell
                      applications.},
      cin          = {PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000388963600011},
      doi          = {10.1109/JPHOTOV.2016.2571619},
      url          = {https://juser.fz-juelich.de/record/825452},
}