Journal Article FZJ-2016-07915

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Strategies for Doped Nanocrystalline Silicon Integration in Silicon Heterojunction Solar Cells

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2016
IEEE New York, NY

IEEE journal of photovoltaics 6(5), 1132 - 1140 () [10.1109/JPHOTOV.2016.2571619]

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Abstract: Carrier collection in silicon heterojunction (SHJ) solar cells is usually achieved by doped amorphous silicon layers of a few nanometers, deposited at opposite sides of the crystalline silicon wafer. These layers are often defect-rich, resulting in modest doping efficiencies, parasitic optical absorption when applied at the front of solar cells, and high contact resistivities with the adjacent transparent electrodes. Their substitution by equally thin doped nanocrystalline silicon layers has often been argued to resolve these drawbacks. However, low-temperature deposition of highly crystalline doped layers of such thickness on amorphous surfaces demands sophisticated deposition engineering. In this paper, we review and discuss different strategies to facilitate the nucleation of nanocrystalline silicon layers and assess their compatibility with SHJ solar cell fabrication. We also implement the obtained layers into devices, yielding solar cells with fill factor values of over 79% and efficiencies of over 21.1%, clearly underlining the promise this material holds for SHJ solar cell applications.

Classification:

Contributing Institute(s):
  1. Mikrostrukturforschung (PGI-5)
Research Program(s):
  1. 143 - Controlling Configuration-Based Phenomena (POF3-143) (POF3-143)

Appears in the scientific report 2016
Database coverage:
Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; No Authors Fulltext ; SCOPUS ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
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Institute Collections > PGI > PGI-5
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 Record created 2016-12-21, last modified 2024-06-10


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