TY  - JOUR
AU  - Schulte-Braucks, Christian
AU  - Glass, S.
AU  - Hofmann, E.
AU  - Stange, D.
AU  - von den Driesch, N.
AU  - Hartmann, J. M.
AU  - Ikonic, Z.
AU  - Zhao, Q. T.
AU  - Buca, D.
AU  - Mantl, S.
TI  - Process modules for GeSn nanoelectronics with high Sn-contents
JO  - Solid state electronics
VL  - 128
SN  - 0038-1101
CY  - Oxford [u.a.]
PB  - Pergamon, Elsevier Science
M1  - FZJ-2017-00076
SP  - 54 - 59
PY  - 2017
AB  - This paper systematically studies GeSn n-FETs, from individual process modules to a complete device. High-k gate stacks and NiGeSn metallic contacts for source and drain are characterized in independent experiments. To study both direct and indirect bandgap semiconductors, a range of 0–14.5 at.% Sn-content GeSn alloys are investigated. Special emphasis is placed on capacitance-voltage (C-V) characteristics and Schottky-barrier optimization. GeSn n-FET devices are presented including temperature dependent I-V characteristics. Finally, as an important step towards implementing GeSn in tunnel-FETs, negative differential resistance in Ge0.87Sn0.13 tunnel-diodes is demonstrated at cryogenic temperatures. The present work provides a base for further optimization of GeSn FETs and novel tunnel FET devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000392680300010
DO  - DOI:10.1016/j.sse.2016.10.024
UR  - https://juser.fz-juelich.de/record/825771
ER  -