000825776 001__ 825776
000825776 005__ 20210129225428.0
000825776 0247_ $$2doi$$a10.1002/9781119069225.ch2-6
000825776 037__ $$aFZJ-2017-00081
000825776 1001_ $$0P:(DE-HGF)0$$aLuryi, Serge$$b0$$eEditor
000825776 245__ $$aHigh Sn-Content GeSn Light Emitters for Silicon Photonics
000825776 260__ $$aHoboken, NJ, USA$$bJohn Wiley & Sons, Inc.$$c2016
000825776 29510 $$aFuture Trends in Microelectronics / Luryi, Serge (Editor)   ; Hoboken, NJ, USA : John Wiley & Sons, Inc., 2016,  ; ISBN: 9781119069119 ; doi:10.1002/9781119069225.ch2-6
000825776 300__ $$a181-195
000825776 3367_ $$2ORCID$$aBOOK_CHAPTER
000825776 3367_ $$07$$2EndNote$$aBook Section
000825776 3367_ $$2DRIVER$$abookPart
000825776 3367_ $$2BibTeX$$aINBOOK
000825776 3367_ $$2DataCite$$aOutput Types/Book chapter
000825776 3367_ $$0PUB:(DE-HGF)7$$2PUB:(DE-HGF)$$aContribution to a book$$bcontb$$mcontb$$s1483958171_19242
000825776 520__ $$aThe present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct-bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power-and temperature-dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct-bandgap GeSn-based devices as a light source for on-chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature-dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high-quality GeSn alloys with very high Sn content.
000825776 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000825776 588__ $$aDataset connected to CrossRef Book
000825776 7001_ $$0P:(DE-HGF)0$$aXu, Jimmy$$b1$$eEditor
000825776 7001_ $$0P:(DE-HGF)0$$aZaslavsky, Alexander$$b2$$eEditor
000825776 7001_ $$0P:(DE-Juel1)161180$$aStange, D.$$b3$$eCorresponding author
000825776 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, C.$$b4
000825776 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, N.$$b5
000825776 7001_ $$0P:(DE-Juel1)138778$$aWirths, S.$$b6
000825776 7001_ $$0P:(DE-Juel1)128617$$aMussler, G.$$b7
000825776 7001_ $$0P:(DE-Juel1)128602$$aLenk, S.$$b8
000825776 7001_ $$0P:(DE-HGF)0$$aStoica, T.$$b9
000825776 7001_ $$0P:(DE-Juel1)128609$$aMantl, S.$$b10
000825776 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b11
000825776 7001_ $$0P:(DE-Juel1)125569$$aBuca, D.$$b12
000825776 7001_ $$0P:(DE-HGF)0$$aGeiger, R.$$b13
000825776 7001_ $$0P:(DE-HGF)0$$aZabel, T.$$b14
000825776 7001_ $$0P:(DE-HGF)0$$aSigg, H.$$b15
000825776 7001_ $$0P:(DE-HGF)0$$aHartmann, J. M.$$b16
000825776 7001_ $$0P:(DE-HGF)0$$aIkonic, Z.$$b17
000825776 773__ $$a10.1002/9781119069225.ch2-6
000825776 909CO $$ooai:juser.fz-juelich.de:825776$$pVDB
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161180$$aForschungszentrum Jülich$$b3$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b4$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b5$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128617$$aForschungszentrum Jülich$$b7$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128602$$aForschungszentrum Jülich$$b8$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128637$$aForschungszentrum Jülich$$b9$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b10$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125588$$aForschungszentrum Jülich$$b11$$kFZJ
000825776 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b12$$kFZJ
000825776 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000825776 9141_ $$y2016
000825776 920__ $$lyes
000825776 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000825776 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000825776 980__ $$acontb
000825776 980__ $$aVDB
000825776 980__ $$aI:(DE-Juel1)PGI-9-20110106
000825776 980__ $$aI:(DE-82)080009_20140620
000825776 980__ $$aUNRESTRICTED