Contribution to a book

FZJ-2017-00081

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png High Sn-Content GeSn Light Emitters for Silicon Photonics

Luryi, S. (Editor) ; Xu, J. (Editor) ; Zaslavsky, A. (Editor) ; Stange, D. (Corresponding author)FZJ* ; Schulte-Braucks, C.FZJ* ; von den Driesch, N.FZJ* ; Wirths, S. ; Mussler, G.FZJ* ; Lenk, S.FZJ* ; Stoica, T.FZJ* ; Mantl, S.FZJ* ; Grützmacher, D.FZJ* ; Buca, D.FZJ* ; Geiger, R. ; Zabel, T. ; Sigg, H. ; Hartmann, J. M. ; Ikonic, Z.

2016
John Wiley & Sons, Inc. Hoboken, NJ, USA

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Please use a persistent id in citations: doi:10.1002/9781119069225.ch2-6

Abstract: The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct-bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power-and temperature-dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct-bandgap GeSn-based devices as a light source for on-chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature-dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high-quality GeSn alloys with very high Sn content.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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