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| Hauptseite > Publikationsdatenbank > High Sn-Content GeSn Light Emitters for Silicon Photonics > print |
| Hauptseite > Publikationsdatenbank > High Sn-Content GeSn Light Emitters for Silicon Photonics > print |
| 001 | 825776 | ||
| 005 | 20210129225428.0 | ||
| 024 | 7 | _ | |a 10.1002/9781119069225.ch2-6 |2 doi |
| 037 | _ | _ | |a FZJ-2017-00081 |
| 100 | 1 | _ | |a Luryi, Serge |0 P:(DE-HGF)0 |b 0 |e Editor |
| 245 | _ | _ | |a High Sn-Content GeSn Light Emitters for Silicon Photonics |
| 260 | _ | _ | |a Hoboken, NJ, USA |c 2016 |b John Wiley & Sons, Inc. |
| 295 | 1 | 0 | |a Future Trends in Microelectronics / Luryi, Serge (Editor) ; Hoboken, NJ, USA : John Wiley & Sons, Inc., 2016, ; ISBN: 9781119069119 ; doi:10.1002/9781119069225.ch2-6 |
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| 520 | _ | _ | |a The present chip technology is based on silicon with increasing number of other materials integrated into electrical circuits. This chapter presents a systematic photoluminescence (PL) study of compressively strained, direct-bandgap GeSn alloys, followed by the analysis of two different optical source designs. First, a direct bandgap GeSn light emitting diode (LED) will be characterized via power-and temperature-dependent electroluminescence (EL) measurements. Then, lasing will be demonstrated in a microdisk (MD) resonator under optical pumping. The integration of direct-bandgap GeSn-based devices as a light source for on-chip communications offers the possibility to monolithically integrate the complete photonic circuit within mainstream silicon technology. The chapter describes material properties using Ge0.875Sn0.125 epilayers of various thicknesses. Temperature-dependent integrated PL intensity is a suitable method to determine whether a semiconductor has a direct or indirect fundamental bandgap. In conclusion, the chapter presents growth and optical characterization of high-quality GeSn alloys with very high Sn content. |
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| 773 | _ | _ | |a 10.1002/9781119069225.ch2-6 |
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