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@INPROCEEDINGS{Pandey:825781,
      author       = {Pandey, R. and Schulte-Braucks, Christian and Sajjad, R. N.
                      and Barth, M. and Gosh, R. K. and Grisafe, B. and Sharma, P.
                      and von den Driesch, Nils and Vohra, A. and Rayner, B. and
                      Loo, R. and Mantl, Siegfried and Buca, Dan Mihai and Yeh,
                      C-C. and Wu, C-H. and Tsai, W. and Antoniadis, D. and Datta,
                      S.},
      title        = {{P}erformance {B}enchmarking of p-type
                      {I}n0.65{G}a0.35{A}s/{G}a{A}s0.4{S}b0.6
                      and{G}e/{G}e0.93{S}n0.07 {H}etero-junction {T}unnel {FET}s},
      reportid     = {FZJ-2017-00086},
      pages        = {19.6.1-19.6.4},
      year         = {2016},
      month         = {Dec},
      date          = {2016-12-05},
      organization  = {2016 IEEE International Electron
                       Devices Meeting (IEDM), San Francisco
                       (USA), 5 Dec 2016 - 7 Dec 2016},
      cin          = {PGI-9 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)8},
      url          = {https://juser.fz-juelich.de/record/825781},
}