Contribution to a conference proceedings

FZJ-2017-00086

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 andGe/Ge0.93Sn0.07 Hetero-junction Tunnel FETs

Pandey, R. ; Schulte-Braucks, C.FZJ* ; Sajjad, R. N. ; Barth, M. ; Gosh, R. K. ; Grisafe, B. ; Sharma, P. ; von den Driesch, N.FZJ* ; Vohra, A. ; Rayner, B. ; Loo, R. ; Mantl, S.FZJ* ; Buca, D. M.FZJ* ; Yeh, C.-C. ; Wu, C.-H. ; Tsai, W. ; Antoniadis, D. ; Datta, S. (Corresponding author)

2016

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2016

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Database coverage:
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