Hauptseite > Publikationsdatenbank > Scaled tri-layer gate oxide for GeSn nanoelectronics > EndNote Text |
%0 Conference Paper %A Schulte-Braucks, Christian %A Pandey, R. %A Barth, M. %A von den Driesch, Nils %A Sharma, P. %A Rayner, B. %A Mantl, Siegfried %A Buca, Dan Mihai %A Datta, S. %T Scaled tri-layer gate oxide for GeSn nanoelectronics %M FZJ-2017-00087 %D 2016 %B 2016 Semiconductor Interface Specialists Conference (SISC) %C 7 Dec 2016 - 10 Dec 2016, San Diego (USA) Y2 7 Dec 2016 - 10 Dec 2016 M2 San Diego, USA %F PUB:(DE-HGF)24 %9 Poster %U https://juser.fz-juelich.de/record/825782