000825782 001__ 825782
000825782 005__ 20210129225430.0
000825782 037__ $$aFZJ-2017-00087
000825782 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author$$ufzj
000825782 1112_ $$a2016 Semiconductor Interface Specialists Conference (SISC)$$cSan Diego$$d2016-12-07 - 2016-12-10$$wUSA
000825782 245__ $$aScaled tri-layer gate oxide for GeSn nanoelectronics
000825782 260__ $$c2016
000825782 3367_ $$033$$2EndNote$$aConference Paper
000825782 3367_ $$2BibTeX$$aINPROCEEDINGS
000825782 3367_ $$2DRIVER$$aconferenceObject
000825782 3367_ $$2ORCID$$aCONFERENCE_POSTER
000825782 3367_ $$2DataCite$$aOutput Types/Conference Poster
000825782 3367_ $$0PUB:(DE-HGF)24$$2PUB:(DE-HGF)$$aPoster$$bposter$$mposter$$s1483957994_19245$$xAfter Call
000825782 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000825782 536__ $$0G:(EU-Grant)619509$$aE2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)$$c619509$$fFP7-ICT-2013-11$$x1
000825782 7001_ $$0P:(DE-HGF)0$$aPandey, R.$$b1
000825782 7001_ $$0P:(DE-HGF)0$$aBarth, M.$$b2
000825782 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b3$$ufzj
000825782 7001_ $$0P:(DE-HGF)0$$aSharma, P.$$b4
000825782 7001_ $$0P:(DE-HGF)0$$aRayner, B.$$b5
000825782 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b6$$ufzj
000825782 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b7$$ufzj
000825782 7001_ $$0P:(DE-HGF)0$$aDatta, S.$$b8
000825782 909CO $$ooai:juser.fz-juelich.de:825782$$pec_fundedresources$$pVDB$$popenaire
000825782 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b0$$kFZJ
000825782 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b3$$kFZJ
000825782 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b6$$kFZJ
000825782 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b7$$kFZJ
000825782 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000825782 9141_ $$y2016
000825782 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000825782 920__ $$lyes
000825782 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000825782 980__ $$aposter
000825782 980__ $$aVDB
000825782 980__ $$aUNRESTRICTED
000825782 980__ $$aI:(DE-Juel1)PGI-9-20110106