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@INPROCEEDINGS{SchulteBraucks:825782,
      author       = {Schulte-Braucks, Christian and Pandey, R. and Barth, M. and
                      von den Driesch, Nils and Sharma, P. and Rayner, B. and
                      Mantl, Siegfried and Buca, Dan Mihai and Datta, S.},
      title        = {{S}caled tri-layer gate oxide for {G}e{S}n nanoelectronics},
      reportid     = {FZJ-2017-00087},
      year         = {2016},
      month         = {Dec},
      date          = {2016-12-07},
      organization  = {2016 Semiconductor Interface
                       Specialists Conference (SISC), San
                       Diego (USA), 7 Dec 2016 - 10 Dec 2016},
      subtyp        = {After Call},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/825782},
}