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000826329 1001_ $$0P:(DE-HGF)0$$aMarchewka, A.$$b0
000826329 1112_ $$a2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)$$cNuremberg$$d2016-09-06 - 2016-09-08$$wGermany
000826329 245__ $$aA 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides
000826329 260__ $$bIEEE$$c2016
000826329 300__ $$a145
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000826329 500__ $$aISBN 978-1-5090-0818-6
000826329 520__ $$aWe present a 2D axisymmetric model to simulate nonisothermal electronic-ionic transport in resistive-switching metal-oxide-metal structures, taking into account the effect of contact potential barriers. The model is applied to study the reset process in terms of the dynamic equilibrium between ionic drift and diffusion and of the physical parameters influencing this equilibrium. Furthermore, it is shown to capture the typical abrupt set and gradual reset behavior occurring during quasi-static voltage sweeps. Analyses of the filament evolution during the voltage sweep are performed to characterize the resulting resistance states.
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000826329 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b1$$ufzj
000826329 7001_ $$0P:(DE-Juel1)158062$$aMenzel, S.$$b2$$ufzj
000826329 773__ $$a10.1109/SISPAD.2016.7605168
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