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@INPROCEEDINGS{Marchewka:826329,
author = {Marchewka, A. and Waser, R. and Menzel, S.},
title = {{A} 2{D} axisymmetric dynamic drift-diffusion model for
numerical simulation of resistive switching phenomena in
metal oxides},
publisher = {IEEE},
reportid = {FZJ-2017-00562},
pages = {145},
year = {2016},
note = {ISBN 978-1-5090-0818-6},
abstract = {We present a 2D axisymmetric model to simulate
nonisothermal electronic-ionic transport in
resistive-switching metal-oxide-metal structures, taking
into account the effect of contact potential barriers. The
model is applied to study the reset process in terms of the
dynamic equilibrium between ionic drift and diffusion and of
the physical parameters influencing this equilibrium.
Furthermore, it is shown to capture the typical abrupt set
and gradual reset behavior occurring during quasi-static
voltage sweeps. Analyses of the filament evolution during
the voltage sweep are performed to characterize the
resulting resistance states.},
month = {Sep},
date = {2016-09-06},
organization = {2016 International Conference on
Simulation of Semiconductor Processes
and Devices (SISPAD), Nuremberg
(Germany), 6 Sep 2016 - 8 Sep 2016},
cin = {PGI-7},
cid = {I:(DE-Juel1)PGI-7-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)8},
doi = {10.1109/SISPAD.2016.7605168},
url = {https://juser.fz-juelich.de/record/826329},
}