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| Hauptseite > Publikationsdatenbank > A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides > print |
| Hauptseite > Publikationsdatenbank > A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides > print |
| 001 | 826329 | ||
| 005 | 20210129225601.0 | ||
| 024 | 7 | _ | |a 10.1109/SISPAD.2016.7605168 |2 doi |
| 037 | _ | _ | |a FZJ-2017-00562 |
| 100 | 1 | _ | |a Marchewka, A. |0 P:(DE-HGF)0 |b 0 |
| 111 | 2 | _ | |a 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) |c Nuremberg |d 2016-09-06 - 2016-09-08 |w Germany |
| 245 | _ | _ | |a A 2D axisymmetric dynamic drift-diffusion model for numerical simulation of resistive switching phenomena in metal oxides |
| 260 | _ | _ | |c 2016 |b IEEE |
| 300 | _ | _ | |a 145 |
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| 500 | _ | _ | |a ISBN 978-1-5090-0818-6 |
| 520 | _ | _ | |a We present a 2D axisymmetric model to simulate nonisothermal electronic-ionic transport in resistive-switching metal-oxide-metal structures, taking into account the effect of contact potential barriers. The model is applied to study the reset process in terms of the dynamic equilibrium between ionic drift and diffusion and of the physical parameters influencing this equilibrium. Furthermore, it is shown to capture the typical abrupt set and gradual reset behavior occurring during quasi-static voltage sweeps. Analyses of the filament evolution during the voltage sweep are performed to characterize the resulting resistance states. |
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| 773 | _ | _ | |a 10.1109/SISPAD.2016.7605168 |
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