% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Moors:826347,
      author       = {Moors, Marco and Adepalli, Kiran Kumar and Lu, Qiyang and
                      Wedig, Anja and Bäumer, Christoph and Skaja, Katharina and
                      Arndt, Benedikt and Tuller, Harry Louis and Dittmann, Regina
                      and Yildiz, Bilge and Valov, Ilia and Waser, R.},
      title        = {{R}esistive {S}witching {M}echanisms on {T}a{O}$_{x}$ and
                      {S}r{R}u{O}$_{3}$ {T}hin-{F}ilm {S}urfaces {P}robed by
                      {S}canning {T}unneling {M}icroscopy},
      journal      = {ACS nano},
      volume       = {10},
      number       = {1},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-00575},
      pages        = {1481 - 1492},
      year         = {2016},
      abstract     = {The local electronic properties of tantalum oxide (TaOx, 2
                      ≤ x ≤ 2.5) and strontium ruthenate (SrRuO3) thin-film
                      surfaces were studied under the influence of electric fields
                      induced by a scanning tunneling microscope (STM) tip. The
                      switching between different redox states in both oxides is
                      achieved without the need for physical electrical contact by
                      controlling the magnitude and polarity of the applied
                      voltage between the STM tip and the sample surface. We
                      demonstrate for TaOx films that two switching mechanisms
                      operate. Reduced tantalum oxide shows resistive switching
                      due to the formation of metallic Ta, but partial oxidation
                      of the samples changes the switching mechanism to one
                      mediated mainly by oxygen vacancies. For SrRuO3, we found
                      that the switching mechanism depends on the polarity of the
                      applied voltage and involves formation, annihilation, and
                      migration of oxygen vacancies. Although TaOx and SrRuO3
                      differ significantly in their electronic and structural
                      properties, the resistive switching mechanisms could be
                      elaborated based on STM measurements, proving the general
                      capability of this method for studying resistive switching
                      phenomena in different classes of transition metal oxides.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000369115800166},
      pubmed       = {pmid:26738414},
      doi          = {10.1021/acsnano.5b07020},
      url          = {https://juser.fz-juelich.de/record/826347},
}