%0 Journal Article
%A Wen, Jiao
%A Liu, Qiang
%A Liu, Chang
%A Wang, Yize
%A Zhang, Bo
%A Xue, Zhongying
%A Di, Zengfeng
%A Min, Jiahua
%A Yu, Wenjie
%A Liu, Xinke
%A Wang, Xi
%A Zhao, Qing-Tai
%T Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
%J Microelectronic engineering
%V 163
%@ 0167-9317
%C [S.l.]
%I Elsevier
%M FZJ-2017-00653
%P 115 - 118
%D 2016
%X An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360 mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000381837300017
%R 10.1016/j.mee.2016.06.017
%U https://juser.fz-juelich.de/record/826428