Journal Article

FZJ-2017-00653

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity

Wen, J. ; Liu, Q. ; Liu, C.FZJ* ; Wang, Y. ; Zhang, B. ; Xue, Z. ; Di, Z. ; Min, J. ; Yu, W. (Corresponding author) ; Liu, X. (Corresponding author) ; Wang, X. ; Zhao, Q.-T.FZJ*

2016
Elsevier [S.l.]

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Please use a persistent id in citations: doi:10.1016/j.mee.2016.06.017

Abstract: An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360 mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2016

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Database coverage:
; Current Contents - Engineering, Computing and Technology ; Ebsco Academic Search ; IF < 5 ; JCR ; Nationallizenz ; No Authors Fulltext ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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