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000826428 245__ $$aIon-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
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000826428 520__ $$aAn ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360 mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process.
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000826428 7001_ $$0P:(DE-Juel1)166278$$aLiu, Chang$$b2$$ufzj
000826428 7001_ $$0P:(DE-HGF)0$$aWang, Yize$$b3
000826428 7001_ $$0P:(DE-HGF)0$$aZhang, Bo$$b4
000826428 7001_ $$0P:(DE-HGF)0$$aXue, Zhongying$$b5
000826428 7001_ $$0P:(DE-HGF)0$$aDi, Zengfeng$$b6
000826428 7001_ $$0P:(DE-HGF)0$$aMin, Jiahua$$b7
000826428 7001_ $$0P:(DE-HGF)0$$aYu, Wenjie$$b8$$eCorresponding author
000826428 7001_ $$0P:(DE-HGF)0$$aLiu, Xinke$$b9$$eCorresponding author
000826428 7001_ $$0P:(DE-HGF)0$$aWang, Xi$$b10
000826428 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b11$$ufzj
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