TY  - JOUR
AU  - Wen, Jiao
AU  - Liu, Qiang
AU  - Liu, Chang
AU  - Wang, Yize
AU  - Zhang, Bo
AU  - Xue, Zhongying
AU  - Di, Zengfeng
AU  - Min, Jiahua
AU  - Yu, Wenjie
AU  - Liu, Xinke
AU  - Wang, Xi
AU  - Zhao, Qing-Tai
TI  - Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity
JO  - Microelectronic engineering
VL  - 163
SN  - 0167-9317
CY  - [S.l.]
PB  - Elsevier
M1  - FZJ-2017-00653
SP  - 115 - 118
PY  - 2016
AB  - An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360 mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000381837300017
DO  - DOI:10.1016/j.mee.2016.06.017
UR  - https://juser.fz-juelich.de/record/826428
ER  -