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| 001 | 826428 | ||
| 005 | 20210129225616.0 | ||
| 024 | 7 | _ | |a 10.1016/j.mee.2016.06.017 |2 doi |
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| 024 | 7 | _ | |a 1873-5568 |2 ISSN |
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| 100 | 1 | _ | |a Wen, Jiao |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Ion-sensitive field-effect transistor with sSi/Si0.5Ge0.5/sSOI quantum-well for high voltage sensitivity |
| 260 | _ | _ | |a [S.l.] |c 2016 |b Elsevier |
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| 520 | _ | _ | |a An ion-sensitive field-effect transistor (ISFET) with improved sensing current and voltage sensitivity is realized by using a sSi/Si0.5Ge0.5/sSOI quantum-well (QW) heterostructure and an Al2O3 dielectric layer as sensing membrane coupling with the back-gate. The voltage sensitivity is much higher than the reference SOI ISFET, typically at low drain current due to the high hole mobility confined in the SiGe QW. A high voltage sensitivity 360 mV/pH with a linearity of 99.89% was achieved for QW ISFET. The results of the planar QW ISFET show great potential for low cost, real-time monitoring of bio-chemicals due to its simplified process. |
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| 700 | 1 | _ | |a Zhang, Bo |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Xue, Zhongying |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Di, Zengfeng |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Min, Jiahua |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Yu, Wenjie |0 P:(DE-HGF)0 |b 8 |e Corresponding author |
| 700 | 1 | _ | |a Liu, Xinke |0 P:(DE-HGF)0 |b 9 |e Corresponding author |
| 700 | 1 | _ | |a Wang, Xi |0 P:(DE-HGF)0 |b 10 |
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| 773 | _ | _ | |a 10.1016/j.mee.2016.06.017 |g Vol. 163, p. 115 - 118 |0 PERI:(DE-600)1497065-x |p 115 - 118 |t Microelectronic engineering |v 163 |y 2016 |x 0167-9317 |
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