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Conference Presentation (Other) FZJ-2017-00687
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Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications

 ;  ;

2016

DPG Tagung, RegensburgRegensburg, GErmany, 6 Mar 2016 - 12 Mar 20162016-03-062016-03-12

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
Research Program(s):
  1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2016
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 Record created 2017-01-19, last modified 2021-01-29
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