Home > Publications database > Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications > print

001     826462
005     20210129225621.0
037 _ _ |a FZJ-2017-00687
100 1 _ |a Hardtdegen, Alexander
|0 P:(DE-Juel1)165704
|b 0
111 2 _ |a DPG Tagung
|c Regensburg
|d 2016-03-06 - 2016-03-12
|w GErmany
245 _ _ |a Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications
260 _ _ |c 2016
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a Conference Presentation
|b conf
|m conf
|0 PUB:(DE-HGF)6
|s 1484834641_355
|2 PUB:(DE-HGF)
|x Other
536 _ _ |a 524 - Controlling Collective States (POF3-524)
|0 G:(DE-HGF)POF3-524
|c POF3-524
|f POF III
|x 0
700 1 _ |a Hoffmann-Eifert, Susanne
|0 P:(DE-Juel1)130717
|b 1
700 1 _ |a Waser, R.
|0 P:(DE-Juel1)131022
|b 2
909 C O |o oai:juser.fz-juelich.de:826462
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)165704
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)130717
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)131022
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-524
|2 G:(DE-HGF)POF3-500
|v Controlling Collective States
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
915 _ _ |a No Authors Fulltext
|0 StatID:(DE-HGF)0550
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-7-20110106

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