Home > Publications database > Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series
 
Poster (Other) FZJ-2017-00689
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Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series

 ;

2016

International Memory Workshop, ParisParis, France, 15 May 2016 - 20 May 20162016-05-152016-05-20

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA Institut Green IT (PGI-10)
  3. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2016
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JARA > JARA > JARA-JARA\-FIT
Document types > Presentations > Poster
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-7
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Publications database
 Record created 2017-01-19, last modified 2021-01-29
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