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| Hauptseite > Publikationsdatenbank > Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series > print |
| Hauptseite > Publikationsdatenbank > Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series > print |
| 001 | 826464 | ||
| 005 | 20210129225621.0 | ||
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| 100 | 1 | _ | |a Hardtdegen, Alexander |0 P:(DE-Juel1)165704 |b 0 |
| 111 | 2 | _ | |a International Memory Workshop |c Paris |d 2016-05-15 - 2016-05-20 |w France |
| 245 | _ | _ | |a Internal Cell Resistance as the Origin of Abrupt Reset Behavior in HfO2-Based Devices Determined from Current Compliance Series |
| 260 | _ | _ | |c 2016 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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