%0 Conference Paper
%A Hardtdegen, Alexander
%A Hoffmann-Eifert, Susanne
%A Waser, R.
%T ALD metal oxide bilayers for memristive devices – effect of stack sequence and nanocrossbar structure on the switching behavior
%M FZJ-2017-00690
%D 2016
%B International Memory Workshop
%C 15 May 2016 - 18 May 2016, Paris (France)
Y2 15 May 2016 - 18 May 2016
M2 Paris, France
%F PUB:(DE-HGF)24
%9 Poster
%U https://juser.fz-juelich.de/record/826465