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Poster (Other) FZJ-2017-00690
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ALD metal oxide bilayers for memristive devices – effect of stack sequence and nanocrossbar structure on the switching behavior

 ;  ;

2016

International Memory Workshop, ParisParis, France, 15 May 2016 - 18 May 20162016-05-152016-05-18

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
Research Program(s):
  1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2016
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Document types > Presentations > Poster
Institute Collections > PGI > PGI-7
Workflow collections > Public records
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 Record created 2017-01-19, last modified 2021-01-29
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