000826465 001__ 826465
000826465 005__ 20210129225621.0
000826465 037__ $$aFZJ-2017-00690
000826465 1001_ $$0P:(DE-Juel1)165704$$aHardtdegen, Alexander$$b0
000826465 1112_ $$aInternational Memory Workshop$$cParis$$d2016-05-15 - 2016-05-18$$wFrance
000826465 245__ $$aALD metal oxide bilayers for memristive devices – effect of stack sequence and nanocrossbar structure on the switching behavior
000826465 260__ $$c2016
000826465 3367_ $$033$$2EndNote$$aConference Paper
000826465 3367_ $$2BibTeX$$aINPROCEEDINGS
000826465 3367_ $$2DRIVER$$aconferenceObject
000826465 3367_ $$2ORCID$$aCONFERENCE_POSTER
000826465 3367_ $$2DataCite$$aOutput Types/Conference Poster
000826465 3367_ $$0PUB:(DE-HGF)24$$2PUB:(DE-HGF)$$aPoster$$bposter$$mposter$$s1484830743_355$$xOther
000826465 536__ $$0G:(DE-HGF)POF3-524$$a524 - Controlling Collective States (POF3-524)$$cPOF3-524$$fPOF III$$x0
000826465 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b1
000826465 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b2
000826465 909CO $$ooai:juser.fz-juelich.de:826465$$pVDB
000826465 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165704$$aForschungszentrum Jülich$$b0$$kFZJ
000826465 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130717$$aForschungszentrum Jülich$$b1$$kFZJ
000826465 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b2$$kFZJ
000826465 9131_ $$0G:(DE-HGF)POF3-524$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Collective States$$x0
000826465 9141_ $$y2016
000826465 915__ $$0StatID:(DE-HGF)0550$$2StatID$$aNo Authors Fulltext
000826465 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000826465 980__ $$aposter
000826465 980__ $$aVDB
000826465 980__ $$aUNRESTRICTED
000826465 980__ $$aI:(DE-Juel1)PGI-7-20110106