TY  - CONF
AU  - Hardtdegen, Alexander
AU  - Hoffmann-Eifert, Susanne
AU  - Waser, R.
TI  - ALD metal oxide bilayers for memristive devices – effect of stack sequence and nanocrossbar structure on the switching behavior
M1  - FZJ-2017-00690
PY  - 2016
T2  - International Memory Workshop
CY  - 15 May 2016 - 18 May 2016, Paris (France)
Y2  - 15 May 2016 - 18 May 2016
M2  - Paris, France
LB  - PUB:(DE-HGF)24
UR  - https://juser.fz-juelich.de/record/826465
ER  -