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@INPROCEEDINGS{Hardtdegen:826465,
      author       = {Hardtdegen, Alexander and Hoffmann-Eifert, Susanne and
                      Waser, R.},
      title        = {{ALD} metal oxide bilayers for memristive devices –
                      effect of stack sequence and nanocrossbar structure on the
                      switching behavior},
      reportid     = {FZJ-2017-00690},
      year         = {2016},
      month         = {May},
      date          = {2016-05-15},
      organization  = {International Memory Workshop, Paris
                       (France), 15 May 2016 - 18 May 2016},
      subtyp        = {Other},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/826465},
}