% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@INPROCEEDINGS{Kim:826476,
      author       = {Kim, Wonjoo and Wouters, Dirk J. and Menzel, Stephan and
                      Rodenbucher, Christian and Rana, Vikas and Waser, R.},
      title        = {{L}owering forming voltage and forming-free behavior of
                      {T}a2{O}5 {R}e{RAM} devices},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-00701},
      pages        = {1},
      year         = {2016},
      note         = {ISBN 978-1-5090-2969-3},
      abstract     = {In this paper, we investigate the impact of Ta and Ta2O5
                      thickness and of thermal treatment for the Ta2O5 layer on
                      the forming and switching characteristics of Pt/Ta2O5/Ta/Pt
                      ReRAM devices. The forming voltage (VFORM) decreases with
                      increasing Ta and decreasing Ta2O5 thickness. However, VFORM
                      saturates (~ 2 V) for thicker Ta layers. Thinner Ta2O5
                      switching layer can further reduce the forming voltage to <;
                      1 V for 3 nm-thick Ta2O5. However, thinner Ta2O5 degrades
                      the ROFF / RON ratio and retention of the ReRAM device. On
                      the other hand, thermal treatment of the Ta2O5 results in
                      decrease of initial resistance and VFORM, and rapid thermal
                      anneal at 600°C in O2 ambient induces forming-free behavior
                      for $70\%$ of the characterized devices. These forming-free
                      devices show highly reliable switching operation up to 106
                      cycles with ROFF / RON > 10 and retention time of 104 s at
                      125 °C.},
      month         = {Sep},
      date          = {2016-09-12},
      organization  = {ESSDERC 2016 - 46th European
                       Solid-State Device Research Conference,
                       Lausanne (Switzerland), 12 Sep 2016 -
                       15 Sep 2016},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)8},
      doi          = {10.1109/ESSDERC.2016.7599612},
      url          = {https://juser.fz-juelich.de/record/826476},
}