Hauptseite > Publikationsdatenbank > Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices > print

001     826476
005     20210129225623.0
024 7 _ |a 10.1109/ESSDERC.2016.7599612
|2 doi
037 _ _ |a FZJ-2017-00701
100 1 _ |a Kim, Wonjoo
|0 P:(DE-Juel1)159348
|b 0
|u fzj
111 2 _ |a ESSDERC 2016 - 46th European Solid-State Device Research Conference
|c Lausanne
|d 2016-09-12 - 2016-09-15
|w Switzerland
245 _ _ |a Lowering forming voltage and forming-free behavior of Ta2O5 ReRAM devices
260 _ _ |c 2016
|b IEEE
300 _ _ |a 1
336 7 _ |a CONFERENCE_PAPER
|2 ORCID
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a Output Types/Conference Paper
|2 DataCite
336 7 _ |a Contribution to a conference proceedings
|b contrib
|m contrib
|0 PUB:(DE-HGF)8
|s 1484926095_27107
|2 PUB:(DE-HGF)
500 _ _ |a ISBN 978-1-5090-2969-3
520 _ _ |a In this paper, we investigate the impact of Ta and Ta2O5 thickness and of thermal treatment for the Ta2O5 layer on the forming and switching characteristics of Pt/Ta2O5/Ta/Pt ReRAM devices. The forming voltage (VFORM) decreases with increasing Ta and decreasing Ta2O5 thickness. However, VFORM saturates (~ 2 V) for thicker Ta layers. Thinner Ta2O5 switching layer can further reduce the forming voltage to <; 1 V for 3 nm-thick Ta2O5. However, thinner Ta2O5 degrades the ROFF / RON ratio and retention of the ReRAM device. On the other hand, thermal treatment of the Ta2O5 results in decrease of initial resistance and VFORM, and rapid thermal anneal at 600°C in O2 ambient induces forming-free behavior for 70% of the characterized devices. These forming-free devices show highly reliable switching operation up to 106 cycles with ROFF / RON > 10 and retention time of 104 s at 125 °C.
536 _ _ |a 524 - Controlling Collective States (POF3-524)
|0 G:(DE-HGF)POF3-524
|c POF3-524
|f POF III
|x 0
588 _ _ |a Dataset connected to CrossRef Conference
700 1 _ |a Wouters, Dirk J.
|0 P:(DE-HGF)0
|b 1
700 1 _ |a Menzel, Stephan
|0 P:(DE-Juel1)158062
|b 2
|u fzj
700 1 _ |a Rodenbucher, Christian
|0 P:(DE-Juel1)142194
|b 3
|u fzj
700 1 _ |a Rana, Vikas
|0 P:(DE-Juel1)145504
|b 4
700 1 _ |a Waser, R.
|0 P:(DE-Juel1)131022
|b 5
|u fzj
773 _ _ |a 10.1109/ESSDERC.2016.7599612
856 4 _ |y Restricted
|u https://juser.fz-juelich.de/record/826476/files/07599612.pdf
856 4 _ |y Restricted
|x icon
|u https://juser.fz-juelich.de/record/826476/files/07599612.gif?subformat=icon
856 4 _ |y Restricted
|x icon-1440
|u https://juser.fz-juelich.de/record/826476/files/07599612.jpg?subformat=icon-1440
856 4 _ |y Restricted
|x icon-180
|u https://juser.fz-juelich.de/record/826476/files/07599612.jpg?subformat=icon-180
856 4 _ |y Restricted
|x icon-640
|u https://juser.fz-juelich.de/record/826476/files/07599612.jpg?subformat=icon-640
856 4 _ |y Restricted
|x pdfa
|u https://juser.fz-juelich.de/record/826476/files/07599612.pdf?subformat=pdfa
909 C O |o oai:juser.fz-juelich.de:826476
|p VDB
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)159348
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 2
|6 P:(DE-Juel1)158062
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)142194
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)131022
913 1 _ |a DE-HGF
|b Key Technologies
|l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)
|1 G:(DE-HGF)POF3-520
|0 G:(DE-HGF)POF3-524
|2 G:(DE-HGF)POF3-500
|v Controlling Collective States
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2016
915 _ _ |a No Authors Fulltext
|0 StatID:(DE-HGF)0550
|2 StatID
920 1 _ |0 I:(DE-Juel1)PGI-7-20110106
|k PGI-7
|l Elektronische Materialien
|x 0
980 _ _ |a contrib
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-7-20110106

LibraryCollectionCLSMajorCLSMinorLanguageAuthor
Marc 21