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000826619 1001_ $$0P:(DE-Juel1)125583$$aFox, A.$$b0$$ufzj
000826619 1112_ $$a2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)$$cSmolenice$$d2016-11-13 - 2016-11-16$$wSlovakia
000826619 245__ $$aHighly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate
000826619 260__ $$bIEEE$$c2016
000826619 300__ $$a65-68
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000826619 500__ $$aISBN 978-1-5090-3083-5
000826619 520__ $$aWe developed a novel "combined" two-step epitaxial procedure based on MO VP E and MB E for an optimized growth of group III-nitride layers on silver-metallic substrates. The AlGaN/GaN/AlN heterostructures were used for the fabrication of HFETs. The electrical properties as well as the long-term operation properties were systematically studied and compared with conventional devices. The improved heat dissipation in heterostructures deposited directly on a silver substrate leads to a significant decrease in channel temperature (−60% at 7W/mm) and affects the long term stability of the drain current (± 2%) favorably in the whole range under investigation (up to ∼1000 hours) compared with conventional AlGaN/GaN layers grown on sapphire substrates. The results presented demonstrate the great potential of the novel material-device concept.
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000826619 7001_ $$0P:(DE-Juel1)128613$$aMikulics, M.$$b1$$eCorresponding author$$ufzj
000826619 7001_ $$0P:(DE-HGF)0$$aMarso, M.$$b2
000826619 7001_ $$0P:(DE-HGF)0$$aKocan, M.$$b3
000826619 7001_ $$0P:(DE-HGF)0$$aSofer, Z.$$b4
000826619 7001_ $$0P:(DE-HGF)0$$aKordos, P.$$b5
000826619 7001_ $$0P:(DE-Juel1)128608$$aLuth, H.$$b6$$ufzj
000826619 7001_ $$0P:(DE-Juel1)128631$$aSchubert, J.$$b7$$ufzj
000826619 7001_ $$0P:(DE-Juel1)125588$$aGrutzmacher, D.$$b8$$ufzj
000826619 7001_ $$0P:(DE-Juel1)125593$$aHardtdegen, H.$$b9$$ufzj
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