TY  - CONF
AU  - Fox, A.
AU  - Mikulics, M.
AU  - Marso, M.
AU  - Kocan, M.
AU  - Sofer, Z.
AU  - Kordos, P.
AU  - Luth, H.
AU  - Schubert, J.
AU  - Grutzmacher, D.
AU  - Hardtdegen, H.
TI  - Highly reliable long-term operation of AlGaN/GaN/AlN HFETs grown on silver substrate
PB  - IEEE
M1  - FZJ-2017-00838
SP  - 65-68
PY  - 2016
N1  - ISBN 978-1-5090-3083-5
AB  - We developed a novel "combined" two-step epitaxial procedure based on MO VP E and MB E for an optimized growth of group III-nitride layers on silver-metallic substrates. The AlGaN/GaN/AlN heterostructures were used for the fabrication of HFETs. The electrical properties as well as the long-term operation properties were systematically studied and compared with conventional devices. The improved heat dissipation in heterostructures deposited directly on a silver substrate leads to a significant decrease in channel temperature (−60% at 7W/mm) and affects the long term stability of the drain current (± 2%) favorably in the whole range under investigation (up to ∼1000 hours) compared with conventional AlGaN/GaN layers grown on sapphire substrates. The results presented demonstrate the great potential of the novel material-device concept.
T2  - 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM)
CY  - 13 Nov 2016 - 16 Nov 2016, Smolenice (Slovakia)
Y2  - 13 Nov 2016 - 16 Nov 2016
M2  - Smolenice, Slovakia
LB  - PUB:(DE-HGF)8
DO  - DOI:10.1109/ASDAM.2016.7805896
UR  - https://juser.fz-juelich.de/record/826619
ER  -